嵌入式系统系列

我们的嵌入式系统符合JEDEC内存标准，并提供各种不同外观尺寸、容量、速度，以优化嵌入式系统的表现。

产品特色

• Small Outline Dual In-line Memory Module
• Fully Tested and Optimized for Stability and Performance
• Uses Original IC to Meet Strict Industrial Standards
• JEDEC Standard 1.5V (1.425V~1.575V) & 1.35V (1.28V~1.45V)
• Operating Environment : 0°C ~ 85°C
• RoHS Compliance
• CE/FCC Certification

Overview:

DDR3 SODIMM memory (small outline) is a compact industrial standards memory module that fits neatly into any embedded, surveillance and automation setup. DDR3 SODIMM memory comply with all relevant JEDEC standards and are available in 1GB, 2GB, 4GB, and 8GB capacities and with data transfer rates of 1066MT/s, 1333MT/s, 1600MT/s, and 1866MT/s.

DDR3 SODIMM内存（小外框）是一种紧凑的工业标准内存模块，可巧妙地安装在任何嵌入式、监控和自动化设置中。DDR3 SODIMM内存符合所有相关JEDEC标准，具有1GB、2GB、4GB和8GB容量，数据传输速率分别为1066MT/s、1333MT/s、1600MT/s和1866MT/s。

产品料号：

Density	Component Composition	Part Number	Rank	Voltage	Description
1GB	128Mx16	M3S0-1GSWFLQE	1Rx16	1.5V/1.35V	DDR3 1866 SODIMM
2GB	256Mx16	M3S0-2GSVFLQE	1Rx16	1.5V/1.35V	DDR3 1866 SODIMM
2GB	256Mx8	M3S0-2GSJCLQE	1Rx8	1.5V/1.35V	DDR3 1866 SODIMM
4GB	256Mx8	M3S0-4GSJDLQE	2Rx8	1.5V/1.35V	DDR3 1866 SODIMM
4GB	256Mx16	M3S0-4GSV0LQE	2Rx16	1.5V/1.35V	DDR3 1866 SODIMM
4GB	512Mx8	M3S0-4GSSCLQE	1Rx8	1.5V/1.35V	DDR3 1866 SODIMM
8GB	512Mx8	M3S0-8GSSDLQE	2Rx8	1.5V/1.35V	DDR3 1866 SODIMM

4GB	1866MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0CQE
4GB	1600MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0CPC
4GB	1333MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0CN9
4GB	1866MT/s	256Mx16	Micron	2	2	M3S0-4GMV0CQE
4GB	1600MT/s	256Mx16	Micron	2	2	M3S0-4GMV0CPC
4GB	1333MT/s	256Mx16	Micron	2	2	M3S0-4GMV0CN9
4GB	1866MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDCQE
4GB	1600MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDCPC
4GB	1333MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDCN9
4GB	1066MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDCM7
4GB	800MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDCL6
4GB	1866MT/s	256Mx8	Micron	2	2	M3S0-4GMJDCQE
4GB	1600MT/s	256Mx8	Micron	2	2	M3S0-4GMJDCPC
4GB	1333MT/s	256Mx8	Micron	2	2	M3S0-4GMJDCN9
4GB	1866MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCCQE
4GB	1600MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCCPC
4GB	1333MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCCN9
4GB	1866MT/s	512Mx8	Micron	1	2	M3S0-4GMSCCQE
4GB	1600MT/s	512Mx8	Micron	1	2	M3S0-4GMSCCPC
4GB	1333MT/s	512Mx8	Micron	1	2	M3S0-4GMSCCN9

4GB	1866MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDLQE
4GB	1600MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDLPC
4GB	1333MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDLN9
4GB	1066MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDLM7
4GB	800MT/s	256Mx8	Samsung	2	2	M3S0-4GSJDLL6
4GB	1866MT/s	256Mx8	Micron	2	2	M3S0-4GMJDLQE
4GB	1600MT/s	256Mx8	Micron	2	2	M3S0-4GMJDLPC
4GB	1333MT/s	256Mx8	Micron	2	2	M3S0-4GMJDLN9
4GB	1866MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0LQE
4GB	1600MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0LPC
4GB	1333MT/s	256Mx16	Samsung	2	2	M3S0-4GSV0LN9
4GB	1866MT/s	256Mx16	Micron	2	2	M3S0-4GMV0LQE
4GB	1600MT/s	256Mx16	Micron	2	2	M3S0-4GMV0LPC
4GB	1333MT/s	256Mx16	Micron	2	2	M3S0-4GMV0LN9
4GB	1866MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCLQE
4GB	1600MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCLPC
4GB	1333MT/s	512Mx8	Samsung	1	2	M3S0-4GSSCLN9
4GB	1866MT/s	512Mx8	Micron	1	2	M3S0-4GMSCLQE
4GB	1600MT/s	512Mx8	Micron	1	2	M3S0-4GMSCLPC
4GB	1333MT/s	512Mx8	Micron	1	2	M3S0-4GMSCLN9